A two-temperature technique for PECVD deposition of silicon dioxide
نویسندگان
چکیده
منابع مشابه
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
The effect of deposition conditions on characteristic mechanical properties – elastic modulus and hardness – of low-temperature PECVD silicon nitrides is investigated using nanoindentation. It is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mech...
متن کاملEffects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology
Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...
متن کاملLow temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties
Investigation of material properties D. Hiller, R. Zierold, J. Bachmann, M. Alexe, Y. Yang, J. W. Gerlach, A. Stesmans, M. Jivanescu, U. Müller, J. Vogt, H. Hilmer, P. Löper, M. Künle, F. Munnik, K. Nielsch, and M. Zacharias Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany Max Planck Institute of Microstructure Physics, Weinber...
متن کاملDeposition and Characterization of Pecvd Phosphorus- Doped Silicon Oxynitride Layers for Integrated Optics Applications
Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from N20, 2% SiH4/N2 and 5% PHdAr gaseous mixtures. The PH3/Ar flow rate was varied to investigate the effect of the dopant to the layer properties. As-deposited and annealed (600, 800, 900 and 1000 OC) layers were characterized by Fourier transform infrared spectroscopy, Ruther...
متن کاملFTIR analysis of silicon dioxide thin film deposited by Metal organic-based PECVD
In this study, the silicon dioxide was deposited on the silicon substrate by metal-organic based plasma enhanced chemical vapor deposition (PECVD) method at the low temperature. The metal-organic tetraethoxy-silane (TEOS) was used as a silicon precursor in liquid state. In addition, oxygen and argon were used as ambient gases. Effects of the working pressure and O2/TEOS pressure ratio on the ch...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 1991
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.79568